Mitigating target degradation in sputtering manganite thin films

Colossal magnetoresistive manganite thin films

Mixed-valence perovskite manganites (Re 1−x A x MnO 3 where Re=rare earth, A=alkaline earth) provide a unique opportunity to study the relationships between the structure and the magnetotransport properties due to an interplay among charge carriers, magnetic coupling, orbital ordering and structural distortion. This makes these compounds very exciting from both the basic research and from the t...

Oxygen-driven anisotropic transport in ultra-thin manganite films

Transition metal oxides have a range of unique properties due to coupling of charge, spin, orbital and lattice degrees of freedom and nearly degenerate multiple ground states. These properties make them interesting for applications and for fundamental investigations. Here we report a new phase with abnormal transport anisotropy in La(0.7)Sr(0.3)MnO3 ultra-thin films under large tensile strain. ...

Thickness dependent magnetotransport in ultra-thin manganite films

To understand the near-interface magnetism in manganites, uniform, ultrathin films of La0.67Sr0.33MnO3 were grown epitaxially on single crystal (001) LaAlO3 and (110) NdGaO3 substrates. The temperature and magnetic field dependent film resistance is used to probe the film’s structural and magnetic properties. A surface and/or interface related dead-layer is inferred from the thickness dependent...

Intrinsic domain-wall resistivity in half-metallic manganite thin films

High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target

We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film m...